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| Excelics DATA SHEET * * * * * NON-HERMETIC LOW COST CERAMIC 70 mil PACKAGE TYPICAL 0.85dB NOISE FIGURE AND 10.5dB ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES SUPER LOW NOISE, HIGH GAIN AND HIGH RELIABILITY 180 Min. (All Leads) EPB025A-70 Low Noise High Gain Heterojunction FET 20 D 44 19 4 S S 40 G ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS NF Ga P1dB G1dB Idss Gm Vp BVgd BVgs Rth * All Dimensions In mils PARAMETERS/TEST CONDITIONS Noise Figure Vds=2V, Ids=15mA Associated Gain Vds=2V, Ids=15mA Output Power at 1dB Compression Vds=3V, Ids=25mA Gain at 1dB Compression Vds=3V, Ids=25mA Saturated Drain Current Transconductance Pinch-off Voltage f = 12GHz f = 12GHz f=12GHz f=18GHz f=12GHz f=18GHz MIN TYP 0.85 MAX 1.0 UNIT dB dB dBm dB 9.5 10.5 15.0 15.0 12.0 9.5 Vds=2V, Vgs=0V Vds=2V, Vgs=0V Vds=2V, Ids=1.0mA 20 50 50 80 -1.0 80 mA mS -2.5 V V V o Drain Breakdown Voltage Igd=10uA Source Breakdown Voltage Igs=10uA Thermal Resistance -3 -3 -5 -5 370* C/W Overall Rth depends on case mounting MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 5V 3V Vds Gate-Source Voltage -3V -3V Vgs Drain Current Idss 50mA Ids Forward Gate Current 2mA 0.3mA Igsf Input Power 12dBm @ 1dB Compression Pin o Channel Temperature 175 C 150oC Tch o Storage Temperature -65/175 C -65/150oC Tstg Total Power Dissipation 370mW 310mW Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com 70 EPB025A-70 DATA SHEET Low Noise High Gain Heterojunction FET S-PARAMETERS FREQ (GHz) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 --- S11 --MAG ANG 0.977 -21.3 0.922 -42.4 0.857 -61.7 0.793 -79.8 0.729 -97.0 0.672 -111.1 0.612 -125.3 0.558 -138.7 0.508 -160.7 0.473 178.3 0.437 168.8 0.404 154.6 0.430 127.9 0.460 105.7 0.436 91.0 0.424 73.5 0.450 59.1 0.496 49.9 0.472 30.9 0.518 15.6 0.566 8.9 0.554 0.6 0.534 -18.5 0.575 -35.4 0.550 -43.9 0.522 -57.1 2V, 15mA --- S21 ----- S12 --MAG ANG MAG ANG 5.991 159.2 0.026 75.1 5.602 138.8 0.048 60.3 5.110 120.4 0.065 48.3 4.758 103.7 0.079 38.2 4.445 87.9 0.091 27.6 4.087 73.0 0.098 18.2 3.757 58.9 0.104 9.1 3.494 45.7 0.105 0.3 3.354 31.6 0.110 -6.9 3.169 17.1 0.114 -15.8 3.014 4.5 0.117 -23.9 2.898 -8.6 0.120 -31.1 2.734 -23.4 0.122 -40.9 2.535 -37.4 0.120 -51.0 2.424 -51.6 0.122 -60.3 2.311 -66.6 0.123 -71.4 2.084 -79.5 0.114 -79.0 2.021 -90.2 0.123 -85.3 1.938 -104.6 0.121 -99.1 1.884 -120.1 0.119 -111.5 1.792 -133.9 0.120 -122.4 1.713 -147.9 0.123 -134.0 1.639 -164.8 0.124 -149.4 1.557 176.7 0.126 -167.0 1.513 161.6 0.130 -179.0 1.516 145.7 0.143 166.3 --- S22 --MAG ANG 0.641 -16.1 0.604 -33.3 0.567 -48.6 0.532 -61.2 0.480 -73.9 0.426 -88.7 0.399 -101.8 0.354 -113.4 0.329 -123.7 0.307 -139.6 0.299 -159.3 0.298 -177.4 0.276 165.2 0.269 149.4 0.306 130.5 0.328 108.8 0.296 96.1 0.334 92.8 0.376 76.2 0.412 62.4 0.394 51.5 0.388 46.2 0.378 29.4 0.362 8.2 0.368 -4.3 0.346 -15.8 |
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